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 PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ600
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER 2SJ600 PACKAGE TO-251 TO-252
FEATURES
* Low on-state resistance: RDS(on)1 = 50 m MAX. (VGS = -10 V, ID = -13 A) RDS(on)2 = 79 m MAX. (VGS = -4.0 V, ID = -13 A) * Low Ciss: Ciss = 1900 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package
2SJ600-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
(TO-251) -60
+ 20 + 25 + 70
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
V V A A W W C C A mJ (TO-252)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
45 1.0 150 -55 to +150 -25 62.5
IAS EAS
Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, RG = 25 , VGS = -20 V 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14645EJ1V0DS00 (1st edition) Date Published November 2000 NS CP(K) Printed in Japan
(c)
2000
2SJ600
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = + 20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -13 A VGS = -10 V, ID = -13 A VGS = -4.0 V, ID = -13 A VDS = -10 V, VGS = 0 V, f = 1 MHz ID = -13 A, VGS(on) = -10 V, VDD = -30 V, RG = 0 ID = -25 A, VDD= -48 V, VGS = -10 V IF = -25 A, VGS = 0 V IF = -25 A, VGS = 0 V di/dt = -100 A / s 1.5 10 2.0 20 41 55 1900 350 140 9 10 67 19 38 7 10 1.0 49 100 50 79 MIN. TYP. MAX. -10 UNIT
A A
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
+ 10
2.5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG VGS = -20 V 0 V - ID VDD BVDSS VDS 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD VDS (-)
90% 90% 10% 10%
VGS (-) VGS
Wave Form
0
10%
VGS(on)
90%
IAS
VGS (-) 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = -2 mA 50 RL VDD
PG.
2
Preliminary Data Sheet D14645EJ1V0DS
2SJ600
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1.5-0.1
+0.2
6.50.2 5.00.2 4
2.30.2 0.50.1
0.8 4.3 MAX.
6.50.2 5.00.2 4
1.5-0.1
+0.2
2.30.2 0.50.1
1.60.2
5.50.2
1
2
3
13.7 MIN.
7.0 MAX.
1
2
3
1.10.2
+0.2
0.5-0.1
2.3 2.3
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
0.75
0.7
1.10.2
2.0 MIN.
5.50.2 10.0 MAX.
1.0 MIN. 1.8 TYP.
Preliminary Data Sheet D14645EJ1V0DS
3


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